Transient Voltage Suppression and TVS Diodes

We Have Full Range Of Tvs Diode

• P6KE
• 1.5KE
• SA
• 5KP
• SMBJ

Features

• Trendy patterns
• Comfortable fitting
• Easily washable

Specification

• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown: 26.7V
• Power (Watts): 400W

Advantages

• The main difference between conventional rectifier and bridge rectifier is that it produces almost double the output voltage as a full wave center-tapped transformer rectifier using the same secondary voltage. The advantage of using this circuit is that no center-tapped transformer is required.
• These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage transients.[31] Their p–n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage.

TVS diode is characterized by

• Leakage current: the amount of current conducted when voltage applied is below the maximum reverse standoff voltage.
• Maximum reverse standoff voltage: the voltage below which no significant conduction occurs.
• Breakdown voltage: the voltage at which some specified and significant conduction occurs.
• Clamping voltage: the voltage at which the device will conduct its fully rated current (hundreds to thousands of amperes).
• Parasitic capacitance: The nonconducting diode behaves like a capacitor, which can distort and corrupt high-speed signals. Lower capacitance is generally preferred.
• Parasitic inductance: Because the actual over voltage switching is so fast, the package inductance is the limiting factor for response speed.
• Amount of energy it can absorb: Because the transients are so brief, all of the energy is initially stored
• Internally as heat; a heat sink only affects the time to cool down afterwards. Thus, a high-energy TVS must be physically large. If this capacity is too small, the over voltage will possibly